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ISSN: 2589-2088

Tutorial on Resistor Trimming

It is expensive if not impossible to fabricate embedded resistors to the correct resistance value. Therefore, embedded resistor is often fabricated with a typical value and then use a post-fabrication...

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Design and optimization of 30 V fully isolated nLDMOS with low specific on-resistance for HVIC applications

In this paper, a novel 30 V fully isolated n-channel lateral DMOS (nLDMOS) with low specific on-resistance (RON,sp) is proposed and experimentally realized using 0.35 µm Bipolar-CMOS-DMOS (BCD) process....

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Design and Optimization of Double Balanced Gilbert Cell Mixer in 130 nm CMOS Process

An improved design procedure for double balanced Gilbert cell mixer is proposed for specific gain and power requirements at various license exempted frequency ranges for a variety of wireless equipment...

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Design of CMOS Class AB Bridged Audio Amplifier: A Tutorial

This article presents a tutorial on the design of CMOS Class AB bridged audio amplifier. High power efficiency is achieved by using a bridged output stage. An added advantage of the bridged amplifier...

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Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage

Power loss has long been a problem that humans continue to explore, especially in this high-performance era, in which the question of how to reduce the power loss of electronic products is an important...

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JFET Region Design Trade-Offs of 650 V 4H-SiC Planar Power MOSFETs

650 V silicon carbide (SiC) power MOSFETs with various JFET region design have been successfully fabricated on 6-inch wafers in a state-of-the-art commercial SiC foundry. The trade-offs between the...

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Current collapse scaling in GaN/AlGaN/SiC high electron mobility transistors

This study reports the scaling of current collapse in GaN/AlGaN HEMTs with respect to the un-passivated gate drain distance on the gate edge. The source drain current reduction increased from 4 mA to...

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Deep-subthreshold Schottky barrier IGZO TFT for ultra low-power applications

This study reports the deep subthreshold characteristics (≤1 V) of low thermal budget Indium Gallium Zinc Oxide (IGZO) thin film transistors (TFTs) with Schottky barrier source/drain contacts. The Schottky...

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Low power frequency doubler

A low power frequency doubler circuit that only requires standard CMOS logic gates and on-chip passive components is proposed. The proposed circuit is shown to be compact and has been validated with...

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Multi-layer Perceptron based Comparative Analysis between CNTFET and Quantum Wire FET for Optimum Design Performance

A novel classification technique is applied for identifying carbon nanotube FET and quantum wire FET based on their electrical characteristics and percentage error is estimated using multi-layer perceptron...

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Fast and energy efficient full adder circuit using 14 CNFETs

With the increasing demand for faster, efficient and robust computational devices, the industrial research in circuit design deals with the challenges like size, power, efficiency and scalability. The...

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Design methodology of double nulling resistors nested-Miller compensation of multistage amplifier

This paper presents a methodology to design large capacitive drive amplifier with high gain feed-forward transconductance stage using double nulling resistors nested-Miller compensation. The high gain-bandwidth...

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A 5-bit 500MS/s flash ADC with temperature-compensated inverter-based comparators

In this paper, a 5-bit 500MS/s flash analog-to-digital converter (ADC) with temperature-compensated inverter-based comparators is proposed. In the proposed ADC, a complementary-average system structure...

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Double Edge-Triggered Half-Static Clock-Gating D-Type Flip-Flop

A double edge-triggered D-type flip flop includes a half-static clock gating circuit is presented in this paper. Two dynamic latches that each responses to the rising and falling edges of the gated...

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Digital Logic Implementation of Li-ion Battery Protector

This letter presents an implementation of a li-ion battery protector circuit making use of purely digital logic and resistive divider only, which results in a compact and energy efficient circuit. The...

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Nano-pillars metasurface modelled for perfect absorption at specific wavelengths in infrared spectral regime

In this article we propose a specifically tailored plasmonic metasurface structure which has the possibility to achieve perfect absorption at specific narrow wavelength intervals in infrared spectral...

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Performance analysis of GaN-based micro light-emitting diodes by laser lift-off process

In this study, a monochromatic GaN-based micro-light-emitting-diode (µLED) array was fabricated using flip-chip technology. The laser lift-off (LLO) process was employed to decrease the light divergence...

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Enhanced Performance Double-gate Junction-less Tunnel Field Effect Transistor for Bio-Sensing Application

In this work, a double gate junction-less tunnel FET (DG-JLTFET) has been evaluated for biosensing applications. Tunnelling is the concept in JLTFET which is a heavily doped JL transistor, by decreasing...

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Computational Study of Adsorption behavior of CH4N2O and CH3OH on Fe decorated MoS2 monolayer

In this paper, we report the Fe doped MoS2 monolayer to improve the gas sensing properties. We investigated the electronic properties of Fe doped MoS2 for sensing Urea and Methanol using Density Functional...

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Improving Off-State Breakdown Voltage of a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate

The off-state breakdown voltage of a double-channel AlGaN/GaN HEMT is improved by employing an air-bridge field plate (AFP) and a slant field plate at the gate electrode. It has been observed that using...

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A Capacitor-Reused 2b/Cycle Active-Passive Second-order Noise-Shaping SAR ADC

In this manuscript, a novel 2nd-order noise-shaping successive-approximation register (NS-SAR) analog-to-digital converter (ADC) is introduced for potential application in wideband continuous-time (CT)...

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Design of Convex Corner Compensation Pattern in Manufacturing of Si Diaphragms

The convex corner compensation methodes to manufacture diaphragms with V-grooves of semiconductor pressure sensors have been widely introduced. However, these methods do not seem to be efficiently used...

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Architecture of resistive RAM with write driver

As technological advancements are increasing in the world at a faster rate, the need of miniaturization is also growing parallelly. The scaling of existing MOS technology in nanometre regime has caused...

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Designing the Topology of a Unipolar Pulsed-DC Power Supply using the Open-source Scilab/Xcos Software for a Low-cost Plasma Etcher

We proposed a design topology for a unipolar pulsed direct-current power supply to produce low-cost reactive plasma etcher system. The design was simulated by a block diagram method using the open-source...

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Performance enhancement of triple material double gate TFET with heterojunction and heterodielectric

In this paper, we proposed a 2 dimensional model of tripple material double gate Tunnel Field Effect Transistor (TM-DG TFET) with hetero-junction formed by germanium and silicon materials in the source-channel...

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