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ISSN: 2589-2088

Design of Convex Corner Compensation Pattern in Manufacturing of Si Diaphragms

The convex corner compensation methodes to manufacture diaphragms with V-grooves of semiconductor pressure sensors have been widely introduced. However, these methods do not seem to be efficiently used...

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Double Edge-Triggered Half-Static Clock-Gating D-Type Flip-Flop

A double edge-triggered D-type flip flop includes a half-static clock gating circuit is presented in this paper. Two dynamic latches that each responses to the rising and falling edges of the gated...

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A Current Comparison Based Voltage Supervisory Circuit with On-Chip Detection Voltage Trimming

A low power current comparison based voltage detector with on-chip detection voltage trimming is proposed in this paper. The proposed trimming technique achieves both detection voltage trimming and...

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Tutorial on Resistor Trimming

It is expensive if not impossible to fabricate embedded resistors to the correct resistance value. Therefore, embedded resistor is often fabricated with a typical value and then use a post-fabrication...

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Enhanced Performance Double-gate Junction-less Tunnel Field Effect Transistor for Bio-Sensing Application

In this work, a double gate junction-less tunnel FET (DG-JLTFET) has been evaluated for biosensing applications. Tunnelling is the concept in JLTFET which is a heavily doped JL transistor, by decreasing...

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A Capacitor-Reused 2b/Cycle Active-Passive Second-order Noise-Shaping SAR ADC

In this manuscript, a novel 2nd-order noise-shaping successive-approximation register (NS-SAR) analog-to-digital converter (ADC) is introduced for potential application in wideband continuous-time (CT)...

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Computational Study of Adsorption behavior of CH4N2O and CH3OH on Fe decorated MoS2 monolayer

In this paper, we report the Fe doped MoS2 monolayer to improve the gas sensing properties. We investigated the electronic properties of Fe doped MoS2 for sensing Urea and Methanol using Density Functional...

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Multi-layer Perceptron based Comparative Analysis between CNTFET and Quantum Wire FET for Optimum Design Performance

A novel classification technique is applied for identifying carbon nanotube FET and quantum wire FET based on their electrical characteristics and percentage error is estimated using multi-layer perceptron...

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JFET Region Design Trade-Offs of 650 V 4H-SiC Planar Power MOSFETs

650 V silicon carbide (SiC) power MOSFETs with various JFET region design have been successfully fabricated on 6-inch wafers in a state-of-the-art commercial SiC foundry. The trade-offs between the...

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Digital Logic Implementation of Li-ion Battery Protector

This letter presents an implementation of a li-ion battery protector circuit making use of purely digital logic and resistive divider only, which results in a compact and energy efficient circuit. The...

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Design of CMOS Class AB Bridged Audio Amplifier: A Tutorial

This article presents a tutorial on the design of CMOS Class AB bridged audio amplifier. High power efficiency is achieved by using a bridged output stage. An added advantage of the bridged amplifier...

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Impact of back gate work function for enhancement of analog/RF performance of AJDMDG Stack MOSFET

In this work, the impact of back gate work function on analog/RF performance of Asymmetric Junctionless Dual Material Double Gate MOSFET with high K gate Stack (AJDMDG Stack MOSFET) has been studied....

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Architecture of resistive RAM with write driver

As technological advancements are increasing in the world at a faster rate, the need of miniaturization is also growing parallelly. The scaling of existing MOS technology in nanometre regime has caused...

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The Simulation Study on Internal Stress in Multilayer Thermistors during Soldering Process

A new 3D finite element model to characterize the residual stress distribution in multilayer NTC thermistor during soldering process has been developed. During the soldering process, the effects of...

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Deep-subthreshold Schottky barrier IGZO TFT for ultra low-power applications

This study reports the deep subthreshold characteristics (≤1 V) of low thermal budget Indium Gallium Zinc Oxide (IGZO) thin film transistors (TFTs) with Schottky barrier source/drain contacts. The Schottky...

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Fast and energy efficient full adder circuit using 14 CNFETs

With the increasing demand for faster, efficient and robust computational devices, the industrial research in circuit design deals with the challenges like size, power, efficiency and scalability. The...

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Optical field concentrator with low absorption metasurfaces based on planar silicon nanoantennas on silica

Plasmonic metamaterials open a pathway to a multitude of different applications, from ultrasensitive sensors to merging the packaging density of electronics and the speed of photonics in a single all-optical...

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A 5-bit 500MS/s flash ADC with temperature-compensated inverter-based comparators

In this paper, a 5-bit 500MS/s flash analog-to-digital converter (ADC) with temperature-compensated inverter-based comparators is proposed. In the proposed ADC, a complementary-average system structure...

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Simulation on the electric field effect of Bi thin film

We report our simulation on the electric field effect of Bi thin film. Band diagram and carrier concentrations of the Bi channel at different surface potentials have been obtained by numerically solving...

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Impacts of Indirect Wider Bandgap of Non-Toxic AlxGa1-xAs Buffer in Copper-Indium-Gallium-Diselenide Photovoltaic Cell

A numerical simulation and substantiation have been accomplished to analyze the impact of Al0.9Ga0.1As alloy composite buffer layer band gap and thickness, absorber layer thickness on a ZnO:Al/i-ZnO/Al0.9Ga0.1As/CIGS/Mo/SLG...

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An N-Channel Band-to-Band Tunneling Flash Memory Design Optimization

This letter describes the design optimization of a flash memory cell that uses source-induced band-to-band hot electron (SIBE) injection programming method. The programming efficiency is determined...

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Investigation on 10-nm channel-length n-type junctionless variable barrier nanowire transistor

In this paper we simulated and investigated the device characteristics of a novel device structure derived from the junctionless (JL) gate-all-around (GAA) nanowire (NW) transistor, variable barrier...

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Simulation and analysis of the forward bias current–voltage–temperature characteristics of W/4H-SiC Schottky barrier diodes for temperature-sensing applications

The current-voltage (ID-VD) characteristics of W/4H-SiC Schottky barrier diodes (SBDs) are investigated in the 303–448 K temperature range by means of a numerical simulation study. Results showed a...

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Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage

Power loss has long been a problem that humans continue to explore, especially in this high-performance era, in which the question of how to reduce the power loss of electronic products is an important...

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Designing the Topology of a Unipolar Pulsed-DC Power Supply using the Open-source Scilab/Xcos Software for a Low-cost Plasma Etcher

We proposed a design topology for a unipolar pulsed direct-current power supply to produce low-cost reactive plasma etcher system. The design was simulated by a block diagram method using the open-source...

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