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ISSN: 2589-2088

Ultrashallow defects in SiC MOS capacitors

Capacitance-voltage measurements performed at cryogenic temperatures (14 – 500 K) have been used to determine the ultrashallow interface states in SiC MOS capacitors. These states occupies energy levels...

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Design and Optimization of Double Balanced Gilbert Cell Mixer in 130 nm CMOS Process

An improved design procedure for double balanced Gilbert cell mixer is proposed for specific gain and power requirements at various license exempted frequency ranges for a variety of wireless equipment...

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Nano-pillars metasurface modelled for perfect absorption at specific wavelengths in infrared spectral regime

In this article we propose a specifically tailored plasmonic metasurface structure which has the possibility to achieve perfect absorption at specific narrow wavelength intervals in infrared spectral...

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SnO2 and Ni doped SnO2 /polythiophene nanocomposites for gas sensing applications

This short letter reports the achievement of promising sensing properties by using pure and Ni doped SnO2-Polythiophene nanostructured materials. These nanocomposites of SnO2 (undoped and doped with...

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Improving Off-State Breakdown Voltage of a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate

The off-state breakdown voltage of a double-channel AlGaN/GaN HEMT is improved by employing an air-bridge field plate (AFP) and a slant field plate at the gate electrode. It has been observed that using...

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Low power frequency doubler

A low power frequency doubler circuit that only requires standard CMOS logic gates and on-chip passive components is proposed. The proposed circuit is shown to be compact and has been validated with...

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Z-Copy Current Differencing Buffered Amplifier based Schmitt trigger circuit without passive components

In this paper Z-Copy Current Differencing Buffered Amplifier (ZCCDBA) based new Schmitt trigger is introduced without passive components. This ZCCDBA is a newly introduced active element. It consists...

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A critical look at modular adders using residue number system

Presently, computer scientists and researchers show greater interest in one of the ancient techniques, namely, Residue Number System (RNS) to use in different fields. In this paper, an introduction...

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Voltage differencing transconductance amplifier based fractional order multiple input single output universal filter

In this paper a Voltage Differencing Transconductance Amplifier (VDTA) based Voltage Mode (VM) Multi Input Single Output (MISO) Fractional Order filter (FOF) providing all five filter responses is presented....

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Modeling the negative capacitance effect in dispersive organic materials using modified Drude theory

Frequency- and mobility-dependent admittance have been observed in organic polymer light-emitting diodes. In this paper, we developed a model to describe this dispersive behavior using a modified Drude...

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Planar-Nothing On Insulator parasitic structure within a static induction transistor made by selective epitaxial growth

Power dissipation obstacle in electronic devices is strongly related to their internal breakdown mechanism. The Static Induction Transistor optimization imposes to reach p-gate regions as deep as vertical...

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Development of SiC reliability study tool

Understanding the failure mechanisms is essential to ensure reliability for a new technology of semiconductors. Amongst various existing tools dedicated to silicon-based devices, there is no consensual...

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Mobility model based on piezoresistance coefficients for Ge 3D transistor

•To develop piezoresistance model for Ge 3D transistor.•Stress response for hole mobility of Ge 3D transistor is predicted.•Helps the future 3D Ge-based CMOS device design with strain engineering....

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An improved digital output buffer for a digital temperature sensor with an I2C high speed interface

An improved digital open drain output buffer is designed in a 0.18µm CMOS process. The circuit can operate in a wide range of power supply voltages, from 1.5V to 5.6V. This output buffer is used in...

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GaAs1-xSbx/GaAs single quantum well for long wavelength photonic devices

Carrier dynamics in GaAs1-xSbx/GaAs single quantum well (SQW) is investigated in this report. With Sb incorporation (x = 0.352, 0.405), the photoluminescence (PL) emission peaks exhibit characteristics...

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Effect of aluminum interfacial layer in a niobium oxide based resistive RAM

Resistive RAM (Random Access Memory) has good scalability with high switching speed and low operating voltage making it one of the promising emerging nonvolatile memory technologies. Interfacial layer...

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Performance analysis of GaN-based micro light-emitting diodes by laser lift-off process

In this study, a monochromatic GaN-based micro-light-emitting-diode (µLED) array was fabricated using flip-chip technology. The laser lift-off (LLO) process was employed to decrease the light divergence...

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Design and optimization of 30 V fully isolated nLDMOS with low specific on-resistance for HVIC applications

In this paper, a novel 30 V fully isolated n-channel lateral DMOS (nLDMOS) with low specific on-resistance (RON,sp) is proposed and experimentally realized using 0.35 µm Bipolar-CMOS-DMOS (BCD) process....

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Performance enhancement of triple material double gate TFET with heterojunction and heterodielectric

In this paper, we proposed a 2 dimensional model of tripple material double gate Tunnel Field Effect Transistor (TM-DG TFET) with hetero-junction formed by germanium and silicon materials in the source-channel...

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Analysis and modeling of sequential circuits in QCA nano computing: RAM and SISO register study

Quantum-dot cellular automata (QCA) is a foremost archetype of field-coupled nanoscale devices. It is a non-von-Neumann, minimal energy dissipated model for conventional nano computing by transistor...

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Current collapse scaling in GaN/AlGaN/SiC high electron mobility transistors

This study reports the scaling of current collapse in GaN/AlGaN HEMTs with respect to the un-passivated gate drain distance on the gate edge. The source drain current reduction increased from 4 mA to...

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